| PART |
Description |
Maker |
| APT10057WVR |
POWER MOS V 1000V 17.3A 0.570 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| 22RIA40M 22RIA40MS90 22RIA140S9 22RIA40S90 22RIA40 |
800V 22A Phase Control SCR in a TO-208AA (TO-48) package
1600V 35A Phase Control SCR in a TO-208AA (TO-48) package
1400V 35A Phase Control SCR in a TO-208AA (TO-48) package
1200V 22A Phase Control SCR in a TO-208AA (TO-48) package
1000V 22A Phase Control SCR in a TO-208AA (TO-48) package
100V 22A Phase Control SCR in a TO-208AA (TO-48) package
600V 22A Phase Control SCR in a TO-208AA (TO-48) package
MEDIUMPOWERTHYRISTORS
400V 22A Phase Control SCR in a TO-208AA (TO-48) package
Circular Connector; MIL SPEC:MIL-C-5015 A/B/C; Body Material:Aluminum Alloy; Series:97-3106; No. of Contacts:4; Connector Shell Size:14S; Connecting Termination:Solder; Circular Shell Style:Straight Plug RoHS Compliant: Yes
MEDIUM POWER THYRISTORS 中功率晶闸管
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| APT5024BVR |
POWER MOS V 500V 22A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT12080JVR |
POWER MOS V 1200V 15A 0.800 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
|
ADPOW[Advanced Power Technology]
|
| APT10043 APT10043JVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 1000V 22A 0.430 Ohm
|
Advanced Power Technolo...
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| IRF54003 IRF540 |
N-CHANNEL 100V - 0.055 OHM - 22A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET
N-CHANNEL 100V - 0.055ヘ - 22A TO-220 LOW GATE CHARGE STripFET⑩ II POWER MOSFET
N-CHANNEL 100V - 0.055Ω - 22A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET
|
ST Microelectronics
STMicroelectronics
|
| ISL9R8120S3S ISL9R8120P2 ISL9R8120S3ST ISL9R8120P2 |
8A, 1200V STEALTH DIODE, TO220AC PACKAGE
8A, 1200V STEALTH DIODE, TO263/D2PAK PACKAGE
8A, 1200V StealthDiode 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-263AB
8A/ 1200V Stealth Diode
8A, 1200V Stealth⑩ Diode
8A, 1200V Stealth?/a> Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| HUF75939S3ST HUF75939P3 HUF75939P3NL |
22A, 200V, 0.125 Ohm, N-Channel, UltraFETPower MOSFET
22A 200V 0.125 Ohm N-Channel UltraFET Power MOSFET
22A, 200V, 0.125 Ohm, N-Channel, UltraFET Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| HUFA75623S3ST HUFA75623P3 HUFA75623S3S |
22A, 100V, 0.064 Ohm, N-Channel, UltraFETPower MOSFETs
22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| APTM10UM02FAG |
Single Switch MOSFET Power Module 570 A, 100 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| FSF9150R FSF9150D FN4089 FSF9150R4 FSF9150D1 FSF91 |
22A/ -100V/ 0.140 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| IRFI1310G |
Power MOSFET(Vdss=100V/ Rds(on)=0.04ohm/ Id=22A)
Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A)
|
IRF[International Rectifier]
|
